دیتاشیت PDTB113ES,126
مشخصات دیتاشیت
| نام دیتاشیت |
PDTB113E
|
| حجم فایل |
133.309
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
-
-
Packaging:
Tape & Box (TB)
-
Part Status:
Obsolete
-
Transistor Type:
PNP - Pre-Biased
-
Current - Collector (Ic) (Max):
500mA
-
Voltage - Collector Emitter Breakdown (Max):
50V
-
Resistor - Base (R1):
1 kOhms
-
Resistor - Emitter Base (R2):
1 kOhms
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
33 @ 50mA, 5V
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
-
Current - Collector Cutoff (Max):
500nA
-
Power - Max:
500mW
-
Mounting Type:
Through Hole
-
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
-
Supplier Device Package:
TO-92-3
-
Base Part Number:
PDTB11
-
detail:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3
